Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Set Burst
The Set Burst command specifies the number of bytes to be output during a Read Burst command
before the device wraps around. To set the burst length the host drives CE# low, sends the Set Burst
command cycle (C0H) and one data cycle, then drives CE# high. A cycle is two nibbles, or two clocks,
long, most significant nibble first. After power-up or reset, the burst length is set to eight Bytes (00H).
See Table 4 for burst length data and Figure 12 for the sequence.
Table 4: Burst Length Data
Burst Length
8 Bytes
16 Bytes
32 Bytes
64 Bytes
High Nibble (H0)
0h
0h
0h
0h
Low Nibble (L0)
0h
1h
2h
3h
T4.0 25017
CE#
MODE 3
0
1
2
3
SCK
SIO(3:0)
MODE 0
C1 C0 H0 L0
MSN LSN
1359 F32.0
Note: MSN = Most Significant Nibble,
LSN = Least Significant Nibble
Figure 12: Set Burst Length Sequence
Read Burst
To execute a Read Burst operation the host drives CE# low, then sends the Read Burst command
cycle (0CH), followed by three address cycles, and then one dummy cycle. Each cycle is two nibbles
(clocks) long, most significant nibble first.
After the dummy cycle, the device outputs data on the falling edge of the SCK signal starting from the
specified address location. The data output stream is continuous through all addresses until termi-
nated by a low-to-high transition on CE#.
During Read Burst, the internal address pointer automatically increments until the last byte of the burst
is reached, then jumps to first byte of the burst. All bursts are aligned to addresses within the burst
length, see Table 5. For example, if the burst length is eight Bytes, and the start address is 06h, the
burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern would repeat
until the command was terminated by a low-to-high transition on CE#.
During this operation, blocks that are Read-locked will output data 00H.
Table 5: Burst Address Ranges
Burst Length
8 Bytes
16 Bytes
32 Bytes
64 Bytes
Burst Address Ranges
00-07H, 08-0FH, 10-17H, 18-1FH...
00-0FH, 10-1FH, 20-2FH, 30-3FH...
00-1FH, 20-3FH, 40-5FH, 60-7FH...
00-3FH, 40-7FH, 80-BFH, C0-FFH
T5.0 25017
?2011 Silicon Storage Technology, Inc.
16
DS-25017A
04/11
相关PDF资料
SST38VF6402-90-5I-B3KE-T IC FLASH MPF 64MBIT 90NS 48TFBGA
SST39LF802C-55-4C-MAQE-T IC FLASH MPF 8MBIT 48-WFBGA
SST39SF040-70-4C-WHE IC FLASH MPF 4MBIT 70NS 32TSOP
SST39VF1602C-70-4I-B3KE IC FLASH MPF 16MBIT 70NS 48TFBGA
SST39VF200A-70-4I-MAQE IC FLASH MPF 2MBIT 70NS 48-WFBGA
SST39VF3201-70-4I-B3KE-T IC FLASH MPF 32MBIT 70NS 48TFBGA
SST39VF3201B-70-4C-B3KE IC FLASH MPF 32MBIT 70NS 48TFBGA
SST39VF3201B-70-4I-EKE IC FLASH MPF 32MBIT 70NS 48TSOP
相关代理商/技术参数
SST26VF064B 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-MF 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-SM 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-SO 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-TD 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/MF 制造商:Microchip Technology Inc 功能描述:3.0V SERIAL QUAD I/O (SQI) FLASH MEMORY - Rail/Tube
SST26VF064BA 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104-5I-MF 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0V Serial Quad I/O (SQI) Flash Memory